This unique fusion of desirable properties makes MoS2 a highly potential candidate for next-generation low-cost biosensors. Furthermore, MoS2, with its highly flexible and transparent nature, can offer new opportunities in advanced diagnostics and medical prostheses. Moreover, we establish through theoretical analysis that MoS2 is greatly advantageous for biosensor device scaling without compromising its sensitivity, which is beneficial for single molecular detection. While graphene is also a 2D material, we show here that it cannot compete with a MoS2-based FET biosensor, which surpasses the sensitivity of that based on graphene by more than 74-fold. Indeed, many MoS 2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. Ultrasensitive and specific protein sensing is also achieved with a sensitivity of 196 even at 100 femtomolar concentration. A MoS2-based pH sensor achieving sensitivity as high as 713 for a pH change by 1 unit along with efficient operation over a wide pH range (3-9) is demonstrated. The role is dened by terminal voltages which establish the direction of the current (carriers) ow. Transistor structure is completely symmetrical with respect to the source and drain. Both MoS2 sheet and MoS2 FET sensors exhibit distinct electronic characteristics for the different DNA nucleobases (Thymine, Adenine, Cytosine, and Guanine). In this paper, we introduce and demonstrate FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure. The approach uses prefabricated metal electrodes that are mechanically laminated and transferred on top of MoS2/graphene vertical heterostructures, leading to vertical field-effect transistors. This gives the rise to the name: eld-effect transistor (FET). The electronic transport characteristics of the MoS2 sheet and the MoS2 field effect transistor after placing each of the DNA nucleobases inside the pore are studied. Devices were stored in a N 2 filled glove box between measurements. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron C. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D structures (nanotubes/nanowires), the latter face severe fabrication challenges, impairing their practical applications. In the case of the FET transistors, the P(VDF-TrFE) layer on top of MoS 2 acts as the encapsulation layer. SL-MoS 2 FETs exhibits field effect mobility between 0.5 and 700 cm 2 /Vs 8, 38, 39. 4.Silicon is widely used as substrate material for MoS 2 FETs and it also act as bottom or back gate. The schematic of SL-BG MoS 2 FET is shown in Fig. Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. SL-MoS 2 is a direct energy band gap material (E g 1.8eV).
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